| 摘要 |
A high-voltage semiconductor device capable of preventing a substrate current from forming is disclosed. The method of manufacturing the high-voltage semiconductor device comprises forming a well in a semiconductor substrate, forming a device isolation film in a portion of the semiconductor substrate, forming a series of drift regions below the surface of the semiconductor substrate, forming a gate electrode on the surface of the semiconductor substrate so as to overlap a portion of at least one drift region, and forming a source and a drain region below the surface of the semiconductor substrate drift regions formed on opposing sides of the gate electrode. Advantageously, the substrate current of the semiconductor device is reduced and the operational withstand voltage is increased, improving the characteristics of the high-voltage transistor.
|
