摘要 |
<p>Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon. In addition, the composition may be useful for the removal of titanium nitride layers from a microelectronic device having same thereon.</p> |
申请人 |
ADVANCED TECHNOLOGY MATERIALS, INC.;VISINTIN, PAMELA, M.;JIANG, PING;KORZENSKI, MICHAEL, B.;MINSEK, DAVID, W.;COOPER, EMANUEL, I.;HSU, MING-ANN;FLETCHER, KRISTIN, A. |
发明人 |
VISINTIN, PAMELA, M.;JIANG, PING;KORZENSKI, MICHAEL, B.;MINSEK, DAVID, W.;COOPER, EMANUEL, I.;HSU, MING-ANN;FLETCHER, KRISTIN, A. |