发明名称 |
PROCESS FOR PRODUCTION OF DEVICES |
摘要 |
<p>[PROBLEMS] The invention relates to a process for the production of devices which comprises the step of forming a wiring circuit by etching an aluminum alloy film and proposes a production technique for protecting the aluminum alloy film from damage as completely as possible to realize highly reliable devices. [MEANS FOR SOLVING PROBLEMS] A process for the production of devices which comprises the step of forming an aluminum alloy film on a substrate and etching the aluminum alloy film to form a wiring circuit, wherein the surface of the aluminum alloy film is oxidized after the formation of the film. This surface oxidation is conducted in such a way that the resulting surface-oxidized aluminum alloy film secures at least 80% of the thicknesswise etching speed as calculated in etching an aluminum alloy film of a prescribed thickness with a naturally oxidized layer by use of an etchant for aluminum alloy over the whole thickness.</p> |
申请公布号 |
KR20080063339(A) |
申请公布日期 |
2008.07.03 |
申请号 |
KR20087009478 |
申请日期 |
2008.04.21 |
申请人 |
MITSUI MINING & SMELTING CO., LTD. |
发明人 |
KUBOTA TAKASHI;MATSUURA YOSHINORI |
分类号 |
H01L29/786;C22C21/00;G02F1/1343 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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