| 摘要 |
<p>A semiconductor device having a dummy pattern and a method for forming the same are provided to increase the margin of a photolithography process by preventing pattern defects such as a separation and a collapse of the pattern. A semiconductor substrate(200) includes a pattern formation region(A) and a dummy region(B). An interlayer dielectric(204) is formed on the semiconductor substrate. A semiconductor layer pattern(216) is formed on the pattern formation region on the interlayer dielectric. A dummy pattern(218) is formed on the dummy region on the interlayer dielectric. A contact plug(212) is arranged in the interlayer dielectric and connects the semiconductor layer pattern to the semiconductor substrate. A dummy plug(214) is formed in the interlayer dielectric. A size of the dummy plug is smaller or bigger than that of a hole of the contact plug. The dummy plug is shallower than a depth of the contact plug.</p> |
