| 摘要 |
<p>A method for fabricating a photomask is provided to avoid an increase of time for fabricating a mask by preventing a time interval of an OPC(optical proximity correction) process from being excessively prolonged. An OPC process is performed on a part of a pattern. A mask pattern is formed according to the result of the OPC process. DICD(develop inspection critical dimension) and FICD(final inspection critical dimension) after the OPC process are measured. The DICD and FICD after the OPC process are compared. An interval of the OPC process obtained from the comparison process is used in every pattern to perform an OPC process. The DICD and FICD after the OPC process can be repeated while the interval of the OPC process is varied with respect to a predetermined portion of the pattern.</p> |
