METHOD OF MANUFACTURING A FLASH MEMORY DEVICE

摘要

A method of manufacturing a flash memory device is provided to keep the height of a conductive layer uniformly by using a wet etching solution of large etch selectivity when patterning the conductive layer, thereby enhancing the operating speed. A gate insulation layer is formed on a semiconductor substrate(100). A device isolation layer(110), which is protruded higher than the semiconductor substrate, is formed in an isolation region of the substrate. A first conductive layer is formed at a sidewall of the device isolation layer and at an upper part of the gate insulation layer.