| 摘要 |
A chemical mechanical polishing slurry composition is provided to ensure high selectivity of the polishing rate between a metal layer and an insulating layer. A chemical mechanical polishing slurry composition for metal wire includes 0.1-5wt% of KIO3, 0.01-2wt% of an organic acid, 0.1-30wt% of silica, and 63-99wt% of pure water. The organic acid is at least one selected from the group comprising acetic acid, citric acid, glutamic acid, glycolic acid, formic acid, lactic acid, malic acid, maleic acid, oxalic acid, phthalic acid, succinic acid, tartaric acid, and malonic acid. The slurry composition further comprises tetramethyl ammonium hydroxide.
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