FLASH CELL FUSE CIRCUIT AND NON-VOLATILE MEMORY DEVICE HAVING THE SAME

摘要

A flash cell fuse circuit and a non-volatile semiconductor memory device having the same are provided to prevent fuse cells of the flash cell fuse circuit from being programmed with an unwanted program, when static electricity is generated. A first electrostatic discharge protection circuit(21) decreases an excessive voltage component included in a fuse word line enable signal inputted from a first input node, and generates a first enable signal, and provides the first enable signal to a first node. At least one flash cell fuse part(FUSE_1-FUS_n) generates each data bit of a trim code in response to the first enable signal and a cell selection signal. The first electrostatic discharge protection circuit includes a first resistor connected between the first input node and the first node, and a first capacitor connected between the first node and a ground voltage.