METHOD FOR FORMING SEMICONDUCTOR DEVICE

摘要

A method for forming a semiconductor device is provided to improve the yield by preventing the dishing of the upper part copper line caused by low hardness of the copper line during CMP. A nitride layer(202) or an IMD layer is formed on a semiconductor substrate(200). A via hole(212) or a trench is formed on the IMD layer. A barrier layer and a seed copper layer are formed within the via hole or the trench. A photoresist pattern(210) for filling up the via hole or the trench is formed. A copper oxide layer pattern is formed on an insulation layer including the photoresist pattern. The photoresist pattern is removed. A copper layer is filled up into the via hole or the trench. The upper copper line is formed by performing a planarization process to the copper layer to expose the IMD layer.