METHOD FOR MANUFACTURING OF SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to secure overlay margin between storage electrode contact plugs by expanding the lower part of a contact hole through a wet etching although the contact plugs are misaligned. A first interlayer dielectric comprising a first storage electrode contact plug(14) is formed a semiconductor substrate. A second interlayer dielectric(12) is formed on the first interlayer dielectric. A first contact hole is formed by etching the second interlayer dielectric as a photolithograph using a second storage electrode contact mask. A nitride layer and a capping oxide layer are formed on the entire surface including the first contact hole. A second contact hole exposing the first storage electrode contact plug is formed by etching the lower part of the first contact hole. A conductive layer is formed on the entire surface including the first and second contact holes. A second storage electrode contact plug(36) is formed by performing a planarization process until the conductive layer is exposed.