发明名称 BIT RECORDING METHOD IN THE FERROELECTRIC MEDIA USING PROBE OR CONDUCTING STRUCTURE
摘要 A bit recording method in ferroelectric media using a probe or conductive structure is provided to apply base bias voltage between switching voltages so as to prevent changes in potential and record a small bit. A bit recording method in ferroelectric media comprises the steps of: contacting a probe with the surface of a recording medium and applying switching voltages to the recording medium and the probe for recording bits; and equalizing the potential of the probe and the potential of the recording medium surface to prevent a potential distortion by applying base bias voltage between the switching voltages, where the base bias voltage is a voltage between the negative switch voltage and the ground voltage when recording '0' bit, and a voltage between the ground voltage and the positive switching voltage when recording '1' bit.
申请公布号 KR100842890(B1) 申请公布日期 2008.07.03
申请号 KR20070008059 申请日期 2007.01.25
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HONG, SEUNG BUM;KIM, YUN SEOK;NO, KWANG SOO;CHOA, SUNG HOON;BUEHLMANN SIMON;KIM, JI YOON
分类号 G11B9/14;G11B9/02 主分类号 G11B9/14
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