| 摘要 |
<p>A method for forming a transistor of a semiconductor device is provided to decrease contact resistance of a gate electrode by preventing ions from being implanted into the gate electrode while forming a source/drain region. A polysilicon layer doped with a first conductive type is formed on a substrate. An oxide layer(9a) and a nitride layer(9b) are formed on the polysilicon layer sequentially. A gate electrode(7b) having a blocking layer is formed by patterning the nitride layer, the oxide layer and the polysilicon layer. A source/drain electrode of a second conductive type is formed on the substrate including the gate electrode.</p> |
