| 摘要 |
<p>A method for manufacturing a non-volatile memory device is provided to increase a contact area of a dielectric layer formed on a conductive layer by increasing a roughness of an upper surface of the conductive layer. A first conductive layer(102) for floating gate is separated electrically by an isolation layer. A second conductive layer(107A) for floating gate is formed on the first conductive layer for floating gate including the isolation layer. The entire surface of the second conductive layer is etched to a predetermined thickness. A roughness of an upper surface of the second conductive layer is increased by generating a polymer. A part of the second conductive layer is etched to expose the isolation layer and to form a floating gate isolated.</p> |
