| 摘要 |
A method for forming a micro-pattern of a semiconductor device is provided to perform a trimming process in two steps by forming a hard mask for trimming process with a stacked structure. An etch target layer is formed on an upper surface of a substrate(110). A first hard mask layer(112) is formed on the etch target layer. A second hard mask is formed on the first hard mask. A first hard mask pattern is formed by etching the first hard mask. The second hard mask is etched by using the first hard mask pattern as an etch barrier layer, to form a second hard mask pattern(116A). The etch target layer is etched by using the second hard mask pattern as an etch barrier layer. The first hard mask is composed of a polysilicon layer. The second hard mask is composed of an amorphous carbon layer.
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