| 摘要 |
A manufacturing method of a semiconductor device is provided to form a contact plug sidewall having a vertical profile by forming a contact plug buried into an opening, thereby reducing the resistance of the contact plug. An insulating layer and a hard mask containing metal material are formed on a substrate(110) sequentially. A photoresist pattern is formed on the hard mask. A hard mask pattern(120A) having sidewalls with vertical profile is formed by etching the hard mask through the photoresist pattern. An opening, of which the sidewalls have the vertical profile, is formed by etching the insulating layer through the hard mask pattern. A plug which is buried into the opening is formed.
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