| 摘要 |
A method for forming a BPSG liner is provided to remove factors which cause bad influences to the operations of a device by preventing effectively diffusion of boron and phosphor by a liner of double structure, and to simultaneously perform a role as an etch stop barrier. In a method for forming a BPSG(Boron Phosphor Silicate Glass) liner which is used as an interlayer dielectric, the liner is formed as a structure which stacks up a SiOF and a silicon nitride layer. Before coating the BPSG on a substrate(101) on which a metal line(102) is formed, a silicon nitride layer is formed on the substrate, and the SIOF layer is formed on the silicon nitride layer.
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