| 摘要 |
A method for manufacturing a semiconductor device is provided to improve a gap-fill characteristic of a post insulating layer by securing a process margin between gate patterns. A pattern is formed on an upper surface of a substrate(201). A first insulating layer is formed to fill up a gap between the pattern and the pattern. The first insulating layer except for the insulating pattern of the predetermined thickness is removed from the gap between the pattern and the pattern. A second insulating layer(206) is formed on the first insulating layer to fill up the gap between the pattern and the pattern. The first and second insulating layers are formed with an oxide layer. The oxide layer is composed of a BPSG(Boron Phosphor Silicate Glass).
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