| 摘要 |
Disclosed is a high-power red semiconductor laser wherein it is not necessary to increase heat dissipation area of a laser element since temperature increase of the laser element is suppressed by improving heat dissipation characteristics thereof. Specifically disclosed is a high-power red semiconductor laser wherein an n-AlGaInP cladding layer (3), an AlGaInP optical guide layer (4), an MQW active layer (5), an AlGaInP optical guide layer (6), a p-AlGaInP first cladding layer (7), an AlGaInP etching stop layer (8), an n-AlGaInP block layer (11), a p-AlGaAs second cladding layer (9), a p-GaAs contact layer (10) and a p electrode (12) are formed in layers on a tilted n-GaAs substrate (2), while an n electrode (1) is formed on the back side of the n-GaAs susbstrate (2). The heat dissipation characteristics of the laser element can be improved, since the second cladding layer (9) is composed of AlGaAs having good thermal conductivity.
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