METHOD OF PLASMA DOPING

摘要

A plasma doping method is provided to maintain a constant thickness of a doping target layer after a doping process by mixing an etch gas and a deposition gas. A semiconductor substrate is arranged in an inside of a chamber. A doping target layer having a first thickness is formed on the semiconductor substrate. A first gas supply process is performed to supply a first gas including components of a doping target layer onto the doping target layer. A second gas supply process is performed to supply a second gas including components for reducing the thickness of the doping target layer. The doping target layer includes polysilicon or a metal film. The first gas is composed of SiH4 gas. The second gas includes fluorine.