| 摘要 |
<p>A method for forming a floating gate of a flash memory device is provided to increase coupling ratio by enlarging a boundary area between a floating gate and a control gate, thereby enhancing the program speed. An active region and a field region are defined on a semiconductor substrate(100). A conductive layer(104) for a floating gate, a buffer insulation layer and a barrier conductive layer are formed on the active region. An isolation layer(112) which has a height lower than the conductive layer, is formed in the field region. A first spacer is formed. A part of the first spacer is exposed by removing the barrier conductive layer and the buffer insulation layer. A second spacer is formed at a side of the first spacer above the conductive layer. A floating gate is formed by etching the conductive layer partly using the second spacer as a mask.</p> |
