| 摘要 |
<p>A method for manufacturing a micro pattern of a semiconductor device is provided to suppress process defects such as residues by preventing a silicon rich polymer layer from remaining when a micro pattern is formed by using a hard mask. A carbon rich polymer layer(43) and a silicon rich polymer layer are sequentially formed on an etched layer(42). A photoresist pattern is formed on the silicon rich polymer layer. The silicon rich polymer layer is etched by using the photoresist pattern as an etch barrier. The carbon rich polymer layer is etched by using the etched silicon rich polymer layer as the etch barrier. The remaining silicon rich polymer layer is removed. The etched layer is etched by using the etched carbon rich polymer layer as the etch barrier.</p> |
