METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to increase a reduced width of a critical dimension of an etching target layer pattern by forming different thicknesses of hard masks on a high-pattern-density region and a small-pattern-density region. A first and second regions are formed on a substrate(10). Patterns are formed on the first and second regions through a post process. The density of the patterns of the first region is different from the density of the patterns of the second region. An etching target layer is formed on the substrate. A hard mask(14) having different thicknesses according to the first and second regions is formed on the etching target layer. A hard mask pattern is formed by etching the hard mask. The patterns are formed by etching the etching target layer by performing an etch process using the hard mask pattern as an etch mask.