SEMICONDUCTOR AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor device and a manufacturing method thereof are provided to reduce metal contamination by forming simultaneously a bit line of a memory region and a logic bottom metal electrode of a logic region. A substrate(100) includes transistors. A memory region(A) and a logic region(B) are defined on the substrate. A bit line is electrically connected to at least one transistor in the memory region. A logic capacitor(200) is formed on the logic region. The logic capacitor includes a logic bottom metal electrode(210), a logic dielectric layer(230), and a logic top metal electrode(250). The bit line and the logic bottom metal electrode are formed on the same interlayer dielectric by using the same material. The logic dielectric layer is not formed on the bit line of the memory region.