| 摘要 |
<p>A method for manufacturing a non-volatile memory device is provided to reduce interference between adjacent cells by increasing a gap between adjacent floating gates on a substrate. An active region and a field region are defined on a substrate(10). A recess part is formed by etching a part of the substrate corresponding to the active region. A gate insulating layer(18) is formed along a surface step of the substrate formed through the recess part. A conductive layer for floating gate is formed along the surface step on the gate insulating layer. A hard mask is buried into a stepped part formed by the conductive layer. A floating gate(19A) is formed by etching the conductive layer exposed by the hard mask, to expose the gate insulating layer.</p> |
