| 发明名称 |
Semiconductor device, method of fabricating the same and copper leads |
| 摘要 |
<p>A semiconductor device comprises a semiconductor chip (1a), an Au bump (6) formed on the semiconductor chip, and Cu lead (7) bonded to the Au bump through a bonding part. The Cu lead has a Cu core and a plated Sn layer formed on the Cu core, and the bonding part is formed of an Au-Cu alloy of a binary system.</p> |
| 申请公布号 |
EP1939938(A2) |
申请公布日期 |
2008.07.02 |
| 申请号 |
EP20080000792 |
申请日期 |
1996.02.01 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HOSOMI, EIICHI;TAZAWA, HIROSHI;TAKUBO, CHIAKI;SHIBAZAKI, KOJI |
| 分类号 |
H01L21/60;H01L23/498;H01L21/603;H01L23/485;H01L23/495;H01L23/50 |
主分类号 |
H01L21/60 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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