| 摘要 |
<p>In an electrophoretic medium (10), if there is a demand to lower the height of a partition (13) than that of a spacer (14), in order to make the difference in heights of the partition (13) and the spacer (14) more accurate, the partition (13) and the spacer (14) are formed on a first substrate (11) according to a method which includes a first resist application step where a first negative resist (31) is applied on the first substrate (11), a first exposure step where the first negative resist (31) is exposed to light through a first mask (140) having an aperture pattern (146) for exposing a pattern of the partition (13) to light, a second resist application step where a second negative resist (32) is applied on the first negative resist (31), a second exposure step where the second negative resist (32) and the first negative resist (31) are exposed to light through a second mask (150) having an aperture pattern (156) for exposing a pattern of the spacer (14) to light, and a development step where the first negative resist (31) and the second negative resist (32) are developed.</p> |
