METHOD FOR FORMING THE MASK PATTERN FOR THE SOURCE CONTACT ZONE OF PHOTO DIODE OF CIS

摘要

A method of forming a mask pattern for forming a source contact region of a photodiode in a CMOS image sensor is provided to achieve a desired size of source contact configuration under MUV(Medium UltraViolet) process by optimizing the configuration of a mask pattern. A method of forming a mask pattern for forming a source contact region of a photodiode in a CMOS image sensor comprises a step of deciding a first width and a first height of a source contact region and a step of setting a rectangular having a second width greater than the first width and the first height as a mask pattern.