| 摘要 |
<p>A manufacturing method of a flash memory is provided to minimize a step difference between a cell region and a peripheral region by leaving an ONA film and a metal film in the cell region only. A cell region and a peripheral region are defined on a semiconductor substrate(100). A first conductive layer(104) is formed at the peripheral region. A second conductive layer(110) and a dielectric layer are formed on the semiconductor substrate. The dielectric layer and the second conductive layer are removed. A third conductive layer is formed on the semiconductor substrate. The third conductive layer, the dielectric layer, the second conductive layer and the first conductor layer are etched. The first conductive layer is formed out of a polysilicon layer.</p> |
