| 摘要 |
A method for manufacturing a magneto resistive element is provided to increase MR(Magneto Resistance) ratio by performing pre-treatment of a second metal layer using a rare gas ion beam or RF plasma. A magneto resistive element includes a magnetic pinned layer, a free magnetic layer with magnetization direction varying according to an external magnetic field, an insulation layer(22) provided between the magnetic pinned layer and the free magnetic layer and a current path(21) penetrating through the insulation layer. According to a method for manufacturing the magneto resistive element, a second metal layer(17) is deposited on a first metal layer(15). The second metal layer is changed into an oxide or a nitride by supplying an oxygen gas or a nitride gas. The second metal layer is treated by an ion beam or RF plasma. |
