| 摘要 |
A semiconductor memory device using a ferroelectric device is provided to recover deteriorated cell data by performing a refresh process at specific periods while data is maintained as it is when power turns off. A channel region, a drain region and a source region are formed on a substrate. A ferroelectric layer is formed on the channel region. A wordline(WL0,WL1,WL2) is formed on the ferroelectric layer. Different channel resistance is induced in the channel region according to the polarity state of the ferroelectric layer. A read voltage is applied to the wordline. While a sensing bias voltage is applied to one of the drain or source region, a cell sensing current value varying with the polarity state of the ferroelectric layer is sensed to complete a read operation. The polarity of the ferroelectric layer varies with the voltage applied to the wordline, the drain region and the source region to complete a write operation. A ground voltage can be applied to the rest of the drain region and the source region.
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