SEMICONDUCTOR DEVICE HAVING STI STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device having an STI(Shallow Trench Isolation) structure and a manufacturing method thereof are provided to suppress generation of a recess by forming a first and second impurity doping oxide layers on exposed parts of a sidewall oxide layer and a gap-fill oxide layer. A trench is formed on an isolation region of a substrate(100) in order to define an active region. A sidewall oxide layer(130) is formed to cover an inner wall of the trench. A nitride layer liner(140) is formed on the sidewall oxide layer. A gap-fill insulating layer(150) is formed on the nitride layer liner in order to bury the trench. A first impurity doping oxide layer is formed on an edge region of both ends of the sidewall oxide layer in order to be extended from the substrate to the nitride layer liner at an entrance of the adjacent trench on the substrate.