| 摘要 |
A method for manufacturing a contact plug of a semiconductor device is provided to improve contact characteristic between a contact plug and a metal line by removing or minimizing a key hole within the contact plug. An insulating layer(112) is formed on a substrate(110) on which a metal line is formed. A contact hole(115) is formed by etching the insulating layer, so as to expose the metal line. The upper part of the insulating layer which is exposed to the both sides of the contact hole is etched to extend the width of entrance of the contact hole. A plug material is deposited to fill up the contact hole. A key hole which is generated when depositing the plug material is removed by etching the plug material, so as to expose the insulating layer.
|
