METHOD FOR PATTERNING OF METAL LINE IN SEMICONDUCTOR DEVICE

摘要

A method for patterning a metal line of a semiconductor device is provided to form a metal line pattern on a clean surface by removing an SiO-based polymer or suppressing generation of polymers. A stacked structure of a first polysilicon polymer layer(22), a hard mask layer(23), and a second polysilicon layer(24) is formed on a metal layer(21). A first pattern(100) is formed by etching the second polysilicon layer and the hard mask layer. A first cleaning process is performed to clean the first pattern. A second pattern is formed by etching the metal layer. A second cleaning process is performed to clean the second pattern. The first cleaning process is performed by a wet-etch process using an etching solution for etching an oxide layer. The wet-etch process is performed by using a diluted solution including NH4F and HF.