METHOD OF FORMING A METAL WIRE IN A SEMICONDUCTOR DEVICE

摘要

A method for forming a metal line of a semiconductor device is provided to minimize capacitance of a metal line by forming an etch-stop barrier layer on a second insulating layer and removing the etch-stop barrier layer while forming the metal line. A first insulating layer(101), an etch-stop barrier layer, and a second insulating layer(104) are formed above a semiconductor substrate(100). A part of the second insulating layer is etched by a first etching process. A trench for metal wiring(114) is formed by etching the etch-stop barrier layer and the first insulating layer by a second etching process. The trench is filled with conductive material.