<p>A method for manufacturing a semiconductor device is provided to form a fine pattern through a simple method using self-aligned double patterning. A first oxide layer pattern(20a) is formed on a silicon substrate. The silicon substrate is etched to a predetermined depth by using the first oxide layer pattern as an etch mask. A first silicon layer pattern is formed on the silicon substrate and the first oxide layer pattern in order to form a groove between the oxide layer patterns. A second oxide layer pattern(40b) having a top surface corresponding to the top surface of the first oxide layer pattern is formed in the groove. A second silicon layer pattern is formed by removing a part of the first silicon layer pattern higher than the top surface of the second oxide layer pattern. A third silicon layer pattern(30c) is formed by heating the second silicon layer pattern.</p>
申请公布号
KR100843241(B1)
申请公布日期
2008.07.02
申请号
KR20070031088
申请日期
2007.03.29
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
LIM, JONG HEUN;SON, YONG HOON;HONG, CHANG KI;YOON, BO UN;YUN, SEONG KYU;CHOI, SUK HUN