| 摘要 |
<p>A manufacturing method of a non volatile memory device is provided to improve interference between cells and to increase coupling ratio by forming a floating gate into 'U' shape. An active region and an isolation region are defined on a semiconductor substrate(100). A gate insulating layer and a first conductive layer are formed in the active region, and an isolation layer(110) which is protruded higher than the first conductive layer is formed in the isolation region. A second conductive layer is formed along the surface of the first conductive layer and the isolation layer. An etch protection layer is formed between the isolation layer above the second conductive layer. The second conductive layer is removed. And the etch protection layer is removed.</p> |
