| 摘要 |
A semiconductor device for preventing a lifting operation and a method for fabricating the same are provided to prevent a lifting effect by forming a multilayer structure of a layer having compression stress and a layer having tensile stress. A first insulating layer(36) is formed on a substrate(31). A second insulating layer(37) is formed by stacking alternately a layer having compression stress and a layer having tensile stress on the first insulating layer. The hydroxyl groups of the layer having the compression stress are smaller than the hydroxyl groups of the layer having the tensile stress in the inside of the insulating layer. The hydroxyl groups of the layer having the tensile stress are larger than the hydroxyl groups of the layer having the compression stress. The first and second insulating layers are HDP(Hugh Density Plasma) CVD(Chemical Vapor Deposition) oxide layers.
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