METHOD FOR FABRICATING CAPACITOR IN SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a capacitor of a semiconductor device is provided to enhance the degree of integration and a yield by preventing a contact error between a TiN lower electrode and a storage node contact plug. An insulating layer having an open region is formed on an upper surface of a storage node contact plug(23). A conductive layer and a chemical-permeating prevention layer are laminated on an upper surface of the insulating layer including the open region. A lower electrode(28A) is separated by removing the chemical-permeating prevention layer and the conductive layer except for a cylindrical structure of the chemical-permeating prevention layer and the conductive layer in the open region. The insulating layer is removed selectively. The chemical-permeating prevention layer is removed selectively.