METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

A manufacturing method of a semiconductor device is provided to prevent the generation of a void in a trench by forming over-hang intentionally through DED scheme and removing the over-hang through dry etching. A field region and an active region are defined on a semiconductor substrate(100). A trench is formed at the field region. A tunnel insulating layer(102) and a conductive layer(104) are formed at the active region. A first insulating layer(110) is formed on the conductive layer including the trench. An over-hand which is formed at a side of the conductive layer by the first insulating layer is removed by etching. A second insulating layer(112) is formed on the first insulating layer including the trench so as to fill up the trench.