| 摘要 |
<p>A method for manufacturing a non-volatile memory device is provided to recess equally an isolation layer of a memory cell region and an isolation of a dummy cell region by suppressing a mu trenching effect in an isolation layer etching process. A gate insulating layer(111) and a first conductive layer for floating gate are formed on a substrate(110). A plurality of trenches are formed on a memory cell region, a dummy cell region, and a peripheral circuit region. An isolation layer(115) is buried into the trenches. A side wall having a constant slop is formed in the peripheral circuit region by forming a photoresist pattern(116). The isolation layer of the memory cell region and the isolation layer of the dummy cell region are selectively recessed by using the photoresist pattern. The photoresist pattern is removed.</p> |
