PHASE CHANGE MEMORY DEVICE AND METHODS OF MANUFACTURING AND OPERATING THE SAME

摘要

A phase change memory device, a manufacturing method thereof, and a driving method thereof are provided to maintain characteristics of a program region by preventing unnecessary heat from being delivered to the program region. A phase change memory device includes a switching element and a storage node, which is connected to the switching element. The storage node includes a lower electrode(56), a phase change layer(62), a material layer, and an upper electrode(64). The phase change layer is formed on the lower electrode. The material layer is formed on the phase change layer. The upper electrode is formed on the phase change layer around a material layer. Electrical conductivity of the material layer is smaller than that of the upper electrode.