METHOD FOR FABRICATING A PMD IN A SEMICONDUCTOR

摘要

A method for manufacturing an interlayer dielectric of a semiconductor device is provided to minimize circle defect by controlling high frequency power to form an interlayer dielectric having improved uniformity. An interlayer dielectric is formed on a semiconductor substrate(S200). A barrier metal layer is deposited on the interlayer dielectric comprising a contact hole(S202). A tungsten plug as a contact plug is formed within the contact hole by sequentially removing a tungsten layer and the barrier metal layer on the interlayer dielectric(S204). A metal line which is electrically connected to the semiconductor substrate is formed by selectively patterning the metal layer(S206).