UNIT PIXEL FOR USE IN CMOS IMAGE SENSOR

摘要

A unit pixel of a CMOS(complementary metal oxide semiconductor) image sensor is provided to reduce the pitch size of a pixel itself by forming a unit pixel composed of only NMOS and PMOS. An NMOS(110) is formed on a semiconductor substrate doped with impurities of a first conductivity type to receive light and generate an electrical signal. A PMOS(120) outputs a signal received from the NMOS, including a well doped with impurities of a second conductivity type. The gate and the body of the NMOS can be floated. The NMOS can include a ground connection part formed of the same impurity type as the body so as to be connected to the ground.