| 摘要 |
A TEG pattern and a test method of a semiconductor device using the same are provided to confirm bit cell characteristics in an M1C(Metal 1 Contact) level by using a bit cell TEG pattern when developing an SRAM. A TEG(Test Element Group) pattern comprises more than 2 single TEG modules(100) which comprise a test pad for a bit cell formed up to a metal 1 layer. The single TEG module evaluates one bit cell in each single TEG module. The single TEG module comprises a gate pad, a source pad, a drain pad and a substrate pad.
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