SEMICONDUCTOR AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device and a manufacturing method thereof are provided to form metal wiring with a critical dimension under 100 nano-meters by forming an insulating layer which has a width very smaller than the width of a photoresist. A metal wiring layer(120) is formed on a substrate. An insulating layer(130) is formed on the metal wiring layer. A photoresist pattern(140) having a width of 100 nano meters or more is formed on the insulating layer. The insulating layer is etched by using the photoresist pattern as the mask. The photoresist pattern is removed from the etched insulating layer. A metal line having a width less than 100 nano meters is formed by etching the metal wiring layer selectively by using the insulating layer as the mask.