| 摘要 |
A transistor having a recess channel and a manufacturing method thereof are provided to prevent the damage of a channel due to plasma by eliminating a dry-etch process using the plasma in a second recess manufacturing process. A fist recess pattern having a first depth and a first width is formed on an active region. A second recess pattern(102) having a second depth smaller than the first depth and a second width larger than the first width is formed below the first recess pattern. A third recess pattern(103) having a third depth and a third width is formed below the second recess pattern. A gate insulating layer(30) is formed on surfaces of the first, second, and third recess patterns. A gate(31) is formed to bury the inside of the first, second, and third recess patterns on the gate insulating layer.
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