METHOD FOR FORMING ISOLATION LAYER IN SEMICONDUCTOR DEVICE

摘要

A method for forming an isolation layer of a semiconductor device is provided to control uniformly the effective height of the isolation layer by increasing gradually temperature in thermal processes. A pad nitride layer(103) is formed on an upper surface of a substrate(100). A trench is formed by etching the pad nitride layer and the substrate. An isolation layer(105) is deposited on the pad nitride layer to bury the trench. The isolation is thermally processed by performing a first and second thermal process. The first and second thermal process are performed by increasing gradually the temperature. The first and second thermal process are performed finally at the temperature of 700 °C. The isolation layer is planarized.