| 摘要 |
A method for manufacturing a plug of a semiconductor device is provided to minimize a plug loss and prevent damage to a TiN layer by performing etching which considers a selection ratio between W layer and TiN layer during a W etch-back process. A contact hole(23) is formed on a substrate(21). A barrier layer(24) is formed on the substrate. A plug conductive layer is formed on the barrier layer. A first etching process for etching the plug conductive layer more rapidly and a second etching process which considers a selection ratio between the plug conductive layer and the barrier layer are performed sequentially, so as to perform an etch-back process of the plug conductive layer, so that the etching can be stopped at the barrier layer. Wherein, the plug conductive layer is a tungsten layer, and the barrier layer is a TiN layer.
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