发明名称 |
SEMICONDUCTOR THIN FILM AND PROCESS FOR PRODUCING THE SAME |
摘要 |
<p>This invention provides a transparent oxide semiconductor, which comprises an oxide comprising indium oxide as a main component and cerium oxide as an additive and has such properties that light-derived malfunction does not occur, there is no variation in specific resistance of a thin film caused by heating and the like, and the mobility is high, and a process for producing the same. A semiconductor thin film characterized by comprising indium oxide and cerium oxide and being crystalline and having a specific resistance of 10 +1 to 10 +8 © cm is used. This semiconductor thin film has no significant change in specific resistance and has high mobility. Accordingly, an element having improved switching properties can be provided by constructing a switching element using this semiconductor film.</p> |
申请公布号 |
EP1939319(A1) |
申请公布日期 |
2008.07.02 |
申请号 |
EP20060782427 |
申请日期 |
2006.08.07 |
申请人 |
IDEMITSU KOSAN CO., LTD. |
发明人 |
INOUE, KAZUYOSHI;YANO, KOUKI;TANAKA, NOBUO |
分类号 |
C23C14/08;C01G15/00;H01L21/363 |
主分类号 |
C23C14/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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