METHOD FOR FABRICATING THE SAME OF SEMICONDUCTOR DEVICE IN DUAL POLY GATE

摘要

A method for manufacturing a dual polygate of a semiconductor device is provided to obtain a considerable surface resistance at a low temperature in a rapid annealing process by heating a substrate in a plasma doping process. A gate insulating layer is formed on a semiconductor substrate(301) including a PMOS region and an NMOS region. An N type polysilicon layer(304) is formed on the gate insulating layer. A mask pattern for opening the PMOS region is formed on the N type polysilicon layer. A heating process is performed to heat the semiconductor substrate and a P type impurity implantation process is performed to implant a P type impurity into the N type polysilicon layer of the PMOS region by using a plasma doping process.